EMB2FHAT2R
PNP+PNP DIGITAL TRANSISTOR (CORRManufacturer: Rohm Semiconductor
Categories: Bipolar Transistor Arrays, Pre-Biased
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Rohm Semiconductor's EMB2FHAT2R is a dual PNP pre-biased bipolar transistor array featuring integrated base resistors. This AEC-Q101 qualified component, housed in an EMT6 package, offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. With a transition frequency of 250MHz and a power dissipation of 150mW, it is designed for applications requiring precise and efficient switching. The internal base resistors are specified at 47kOhms. This device is commonly utilized in automotive electronics, digital logic circuits, and general-purpose amplification. The saturation voltage at typical operating conditions (300mV @ 500µA, 10mA) and a minimum DC current gain of 68 @ 5mA, 5V further define its performance characteristics. Supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Power - Max | 150mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 68 @ 5mA, 5V |
| Frequency - Transition | 250MHz |
| Resistor - Base (R1) | 47kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | EMT6 |
| Grade | Automotive |
| Qualification | AEC-Q101 |