EMB11FHAT2R
TRANS 2PNP 100MA EMT6Manufacturer: Rohm Semiconductor
Categories: Bipolar Transistor Arrays, Pre-Biased
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Rohm Semiconductor EMB11FHAT2R is a dual PNP pre-biased bipolar junction transistor (BJT) designed for surface-mount applications. This AEC-Q101 qualified component features two independent PNP transistors within a single EMT6 (SOT-563, SOT-666) package, facilitating space-constrained designs. Each transistor offers a collector current (Ic) capability of up to 100mA and a transition frequency (fT) of 250MHz, suitable for general-purpose switching and amplification tasks. Internal base resistors of 10kOhms are integrated for simplified circuit design. With a maximum power dissipation of 150mW and a DC current gain (hFE) of at least 30 at 5mA collector current and 5V collector-emitter voltage, it is well-suited for automotive applications. The saturation voltage (Vce(sat)) is rated at a maximum of 300mV at 500µA base current and 10mA collector current.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Power - Max | 150mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | - |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V |
| Frequency - Transition | 250MHz |
| Resistor - Base (R1) | 10kOhms |
| Resistor - Emitter Base (R2) | 10kOhms |
| Supplier Device Package | EMT6 |
| Grade | Automotive |
| Qualification | AEC-Q101 |