EMA8T2R
TRANS PREBIAS DUAL PNP EMT5Manufacturer: Rohm Semiconductor
Categories: Bipolar Transistor Arrays, Pre-Biased
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Rohm Semiconductor's EMA8T2R is a dual PNP pre-biased bipolar transistor array in an EMT5 surface mount package. This component features integrated base resistors (R1 = 10 kOhms, R2 = 47 kOhms) for simplified circuit design and reduced component count. It offers a collector-emitter breakdown voltage (Vce(max)) of 50V and a continuous collector current (Ic(max)) of 100mA. The device exhibits a minimum DC current gain (hFE) of 68 at 5mA and 5V, with a saturation voltage (Vce(sat)) of 300mV at 500µA base current and 10mA collector current. Maximum power dissipation is 300mW. The EMA8T2R is commonly utilized in industrial control, consumer electronics, and communication systems for signal switching and amplification applications. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-SMD (5 Leads), Flat Leads |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Power - Max | 300mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 68 @ 5mA, 5V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 10kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | EMT5 |
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