EMA11T2R
TRANS 2PNP PREBIAS 0.15W EMT5Manufacturer: Rohm Semiconductor
Categories: Bipolar Transistor Arrays, Pre-Biased
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Rohm Semiconductor's EMA11T2R is a dual PNP pre-biased bipolar transistor. This component features 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. With a transition frequency of 250MHz and a maximum power dissipation of 150mW, it is suitable for applications requiring compact, integrated switching solutions. The device integrates base resistors of 4.7kOhms (R1) and 47kOhms (R2), simplifying circuit design by eliminating the need for external biasing components. The EMA11T2R is supplied in an EMT5 surface mount package, ideal for space-constrained designs in industrial automation and consumer electronics. Typical saturation voltage at 250µA base and 5mA collector current is 300mV. The minimum DC current gain (hFE) is 80 at 10mA collector current and 5V collector-emitter voltage. This component is packaged on a Tape & Reel (TR).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-SMD (5 Leads), Flat Leads |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Power - Max | 150mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
| Frequency - Transition | 250MHz |
| Resistor - Base (R1) | 4.7kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | EMT5 |
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