2SC5662T2LP
RF TRANS NPN 11V 0.05A VMT3Manufacturer: Rohm Semiconductor
Categories: Bipolar RF Transistors
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Rohm Semiconductor NPN RF Transistor, part number 2SC5662T2LP. This bipolar RF transistor is designed for high-frequency applications, operating with an 11V collector-emitter breakdown voltage and a maximum collector current of 50mA. It features a transition frequency of 3.2GHz and a typical noise figure of 3.5dB at 500MHz, making it suitable for RF amplification stages. The device is housed in a VMT3 (SOT-723) surface mount package and supplied on tape and reel. With a maximum power dissipation of 150mW and an operating temperature up to 150°C (TJ), this component finds application in wireless communication systems and other radio frequency circuitry. The minimum DC current gain (hFE) is 82 at 5mA collector current and 10V collector-emitter voltage.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-723 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | - |
| Power - Max | 150mW |
| Current - Collector (Ic) (Max) | 50mA |
| Voltage - Collector Emitter Breakdown (Max) | 11V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 82 @ 5mA, 10V |
| Frequency - Transition | 3.2GHz |
| Noise Figure (dB Typ @ f) | 3.5dB @ 500MHz |
| Supplier Device Package | VMT3 |
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