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2SC5662T2LP

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2SC5662T2LP

RF TRANS NPN 11V 0.05A VMT3

Manufacturer: Rohm Semiconductor

Categories: Bipolar RF Transistors

Quality Control: Learn More

Rohm Semiconductor NPN RF Transistor, part number 2SC5662T2LP. This bipolar RF transistor is designed for high-frequency applications, operating with an 11V collector-emitter breakdown voltage and a maximum collector current of 50mA. It features a transition frequency of 3.2GHz and a typical noise figure of 3.5dB at 500MHz, making it suitable for RF amplification stages. The device is housed in a VMT3 (SOT-723) surface mount package and supplied on tape and reel. With a maximum power dissipation of 150mW and an operating temperature up to 150°C (TJ), this component finds application in wireless communication systems and other radio frequency circuitry. The minimum DC current gain (hFE) is 82 at 5mA collector current and 10V collector-emitter voltage.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-723
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature150°C (TJ)
Gain-
Power - Max150mW
Current - Collector (Ic) (Max)50mA
Voltage - Collector Emitter Breakdown (Max)11V
DC Current Gain (hFE) (Min) @ Ic, Vce82 @ 5mA, 10V
Frequency - Transition3.2GHz
Noise Figure (dB Typ @ f)3.5dB @ 500MHz
Supplier Device PackageVMT3

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