2SC4726TLP
RF TRANS NPN 11V 0.05A EMT3Manufacturer: Rohm Semiconductor
Categories: Bipolar RF Transistors
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Rohm Semiconductor NPN RF Transistor, part number 2SC4726TLP. This bipolar RF transistor operates with a collector-emitter breakdown voltage of 11V and a maximum collector current of 50mA. Featuring a transition frequency of 3.2GHz and a maximum power dissipation of 150mW, it is designed for high-frequency applications. The minimum DC current gain (hFE) is 56 at 5mA collector current and 10V collector-emitter voltage. Its typical noise figure is 3.5dB at 500MHz. This device is available in an EMT3 surface mount package (SC-75, SOT-416) and is supplied in Digi-Reel® packaging. It finds application in wireless communication systems and RF front-end modules.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Digi-Reel®Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Digi-Reel® |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | - |
| Power - Max | 150mW |
| Current - Collector (Ic) (Max) | 50mA |
| Voltage - Collector Emitter Breakdown (Max) | 11V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 56 @ 5mA, 10V |
| Frequency - Transition | 3.2GHz |
| Noise Figure (dB Typ @ f) | 3.5dB @ 500MHz |
| Supplier Device Package | EMT3 |
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