Rochester Electronics, LLC presents the MD2114AL-3-B, a 1K x 4 Static Random-Access Memory (SRAM) device. This memory integrated circuit offers a compact footprint and efficient operation for applications requiring fast data access. Designed for robust performance, it is suitable for a wide range of industrial and commercial systems. The MD2114AL-3-B is delivered in bulk packaging, facilitating high-volume integration into manufacturing processes. Its architecture provides straightforward read and write operations, making it a dependable choice for memory buffering and data storage needs across various electronic designs.
Additional Information
Series: -RoHS Status: Not applicableManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: Bulk