HZM6.8NB1TL-E
HZM6.8N - ZENER DIODEManufacturer: Renesas
Categories: Single Zener Diodes
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Renesas HZM6-8NB1TL-E is a Zener Diode with a nominal breakdown voltage of 6.6 V and a tight tolerance of ±1.97%. This component offers a maximum power dissipation of 200 mW and a low reverse leakage current of 2 µA at 3.5 V. Its impedance is specified at a maximum of 30 Ohms. The HZM6-8NB1TL-E is designed for surface mount applications and comes in a 3-MPAK (TO-236-3, SC-59, SOT-23-3) package. It operates within an extended temperature range, up to 150°C (TJ). This device is commonly found in power management, voltage regulation, and signal conditioning circuits across various industries, including automotive and industrial electronics.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Tolerance | ±1.97% |
| Packaging | Bulk |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Voltage - Zener (Nom) (Vz) | 6.6 V |
| Impedance (Max) (Zzt) | 30 Ohms |
| Supplier Device Package | 3-MPAK |
| Power - Max | 200 mW |
| Current - Reverse Leakage @ Vr | 2 µA @ 3.5 V |
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