HZM33NBTR-E
HZM33N - ZENER DIODEManufacturer: Renesas
Categories: Single Zener Diodes
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Renesas HZM33NBTR-E is a Zener Diode featuring a nominal breakdown voltage of 33 V with a tight tolerance of ±6.06%. This component offers a maximum power dissipation of 200 mW and a low reverse leakage current of 2 µA at 25 V. The impedance at the test voltage (Zzt) is a maximum of 80 Ohms.
Designed for surface mount applications, the HZM33NBTR-E is housed in a 3-MPAK (TO-236-3, SC-59, SOT-23-3) package, suitable for high-density circuit designs. It operates across a wide temperature range, up to 150°C (TJ). This device finds application in voltage regulation and surge suppression circuits across various industrial and consumer electronics sectors. It is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Tolerance | ±6.06% |
| Packaging | Bulk |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Voltage - Zener (Nom) (Vz) | 33 V |
| Impedance (Max) (Zzt) | 80 Ohms |
| Supplier Device Package | 3-MPAK |
| Power - Max | 200 mW |
| Current - Reverse Leakage @ Vr | 2 µA @ 25 V |
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