HZM12NB3TR-E
HZM12N - ZENER DIODEManufacturer: Renesas
Categories: Single Zener Diodes
Quality Control: Learn More
Renesas HZM12NB3TR-E is a Zener diode with a nominal breakdown voltage of 12.34 V and a tolerance of ±2.11%. This surface mount device dissipates a maximum power of 200 mW and features a low reverse leakage current of 2 µA at 9 V. The Zener impedance (Zzt) is specified at a maximum of 35 Ohms. The component is housed in a 3-MPAK package (TO-236-3, SC-59, SOT-23-3) suitable for automated assembly processes. Operating at an ambient temperature up to 150°C (TJ), this diode is commonly utilized in voltage regulation and transient suppression applications across various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Tolerance | ±2.11% |
| Packaging | Bulk |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Voltage - Zener (Nom) (Vz) | 12.34 V |
| Impedance (Max) (Zzt) | 35 Ohms |
| Supplier Device Package | 3-MPAK |
| Power - Max | 200 mW |
| Current - Reverse Leakage @ Vr | 2 µA @ 9 V |
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