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HZM12NB1TR-E

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HZM12NB1TR-E

HZM12N - ZENER DIODE

Manufacturer: Renesas

Categories: Single Zener Diodes

Quality Control: Learn More

Renesas HZM12NB1TR-E is a Zener diode with a nominal breakdown voltage of 11.66 V and a tolerance of ±2.06%. This surface mount component, packaged in a 3-MPAK (TO-236-3, SC-59, SOT-23-3), is rated for a maximum power dissipation of 200 mW. It exhibits a low reverse leakage current of 2 µA at 9 V and a Zener impedance (Zzt) of 35 Ohms at its rated voltage. The device operates across a wide temperature range, up to 150°C (TJ). This diode is frequently utilized in power supply regulation and voltage reference circuits across various industrial applications, including telecommunications and consumer electronics.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
Tolerance±2.06%
PackagingBulk
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
Voltage - Zener (Nom) (Vz)11.66 V
Impedance (Max) (Zzt)35 Ohms
Supplier Device Package3-MPAK
Power - Max200 mW
Current - Reverse Leakage @ Vr2 µA @ 9 V

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