GA4F3M(0)-T1-A
TRANS PREBIAS NPN 50V 0.1A SC70Manufacturer: Renesas
Categories: Single, Pre-Biased Bipolar Transistors
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Renesas GA4F3M-0-T1-A is an NPN pre-biased bipolar junction transistor. This surface mount component, packaged in an SC-70 (SOT-323) case, offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The device features integrated base resistors, specified at 2 kOhms for both R1 and R2, enabling simplified circuit design. It boasts a minimum DC current gain (hFE) of 50 at 50mA collector current and 5V Vce. With a maximum power dissipation of 150mW, this transistor is suitable for various low-power switching and amplification applications, commonly found in consumer electronics and industrial control systems. The collector cutoff current is rated at a maximum of 100nA, and Vce saturation is 200mV at 250µA base current and 5mA collector current.
Additional Information
Series: -RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:-T1-A&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Bulk |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 50mA, 5V |
| Supplier Device Package | SC-70 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 150 mW |
| Resistor - Base (R1) | 2 kOhms |
| Resistor - Emitter Base (R2) | 2 kOhms |
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