GA1A4Z-T1-A
TRANS PREBIAS NPN 50V 0.1A SC70Manufacturer: Renesas
Categories: Single, Pre-Biased Bipolar Transistors
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Renesas' GA1A4Z-T1-A is an NPN pre-biased bipolar transistor. This surface mount component, housed in an SC-70 (SOT-323) package, offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It features a base resistor (R1) of 10 kOhms, providing a minimum DC current gain (hFE) of 135 at 5mA collector current. The saturation voltage (Vce Sat) is a maximum of 200mV at 250µA base current and 5mA collector current. With a maximum power dissipation of 150mW, this transistor is suitable for applications in consumer electronics and industrial automation where simplified circuitry is beneficial. The device exhibits a low collector cutoff current of 100nA.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 135 @ 5mA, 5V |
| Supplier Device Package | SC-70 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 150 mW |
| Resistor - Base (R1) | 10 kOhms |
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