FA4L4L-T1B-A
TRANS PREBIAS NPN 50V 0.1A SC59Manufacturer: Renesas
Categories: Single, Pre-Biased Bipolar Transistors
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Renesas NPN Pre-Biased Transistor, part number FA4L4L-T1B-A, offers a 50V collector-emitter breakdown voltage with a maximum collector current of 100mA. This surface mount component, supplied in an SC-59 package (TO-236-3, SOT-23-3), features integrated base resistors of 47kOhms (R1) and 22kOhms (R2). The device exhibits a minimum DC current gain (hFE) of 90 at 5mA collector current and 5V Vce. Maximum power dissipation is 200mW. Applications include general-purpose switching and amplification in consumer electronics, industrial control systems, and automotive electronics.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 90 @ 5mA, 5V |
| Supplier Device Package | SC-59 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Resistor - Base (R1) | 47 kOhms |
| Resistor - Emitter Base (R2) | 22 kOhms |
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