CE2F3P-T-AZ
TRANS PREBIAS NPN 60V 2A+F2391Manufacturer: Renesas
Categories: Single, Pre-Biased Bipolar Transistors
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Renesas NPN Pre-Biased Transistor, CE2F3P-T-AZ, offers a robust solution for various electronic designs. This through-hole component features a 60V collector-emitter breakdown voltage and a maximum collector current of 2A, with a power dissipation of 1W. The integrated base resistors, R1 at 2.2 kOhms and R2 at 10 kOhms, simplify circuit design by providing inherent bias. Exhibiting a minimum DC current gain (hFE) of 1000 at 1A and 5V, this transistor ensures efficient signal amplification. Its 3-SSIP package is suitable for applications requiring through-hole mounting. The CE2F3P-T-AZ is commonly utilized in consumer electronics, industrial automation, and automotive systems where reliable switching and amplification are critical.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 3-SSIP |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 1A, 5V |
| Supplier Device Package | - |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 1 W |
| Resistor - Base (R1) | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
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