RJP60D0DPK-01#T0
RJH60D0 - INSULATED GATE BIPOLARManufacturer: Renesas
Categories: Single IGBTs
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Renesas RJP60D0DPK-01-T0 is a 600V, 45A Insulated Gate Bipolar Transistor (IGBT) in a TO-3P package. This device offers a maximum collector power dissipation of 140W and a pulsed collector current capability of 90A. Featuring standard input type, the RJP60D0DPK-01-T0 exhibits a Vce(on) of 2.2V at 15V/22A and a gate charge of 45 nC. Turn-on and turn-off times are specified at 35ns and 90ns respectively at 25°C, under a test condition of 300V, 22A, 5 Ohm, 15V. It operates with a maximum junction temperature of 150°C. This component is suitable for applications in power supply, motor control, and industrial automation.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 22A |
| Supplier Device Package | TO-3P |
| IGBT Type | - |
| Td (on/off) @ 25°C | 35ns/90ns |
| Switching Energy | - |
| Test Condition | 300V, 22A, 5Ohm, 15V |
| Gate Charge | 45 nC |
| Current - Collector (Ic) (Max) | 45 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 90 A |
| Power - Max | 140 W |
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