RJH1DF7RDPQ-80#T2
RJH1DF7 - INSULATED GATE BIPOLARManufacturer: Renesas
Categories: Single IGBTs
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The Renesas RJH1DF7RDPQ-80-T2 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This through-hole component features a 1350 V collector-emitter breakdown voltage and a maximum collector current of 60 A. With a power dissipation rating of 250 W and a package type of TO-247-3, it offers robust thermal performance for operation up to 150°C (TJ). The device exhibits a Vce(on) of 2.55V at 15V gate-emitter voltage and 35A collector current, with typical switching times of 58ns turn-on and 144ns turn-off under specified test conditions. This IGBT is suitable for use in industrial power supplies, motor control systems, and renewable energy inverters.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.55V @ 15V, 35A |
| Supplier Device Package | TO-247 |
| IGBT Type | - |
| Td (on/off) @ 25°C | 58ns/144ns |
| Switching Energy | - |
| Test Condition | 600V, 35A, 5Ohm, 15V |
| Current - Collector (Ic) (Max) | 60 A |
| Voltage - Collector Emitter Breakdown (Max) | 1350 V |
| Power - Max | 250 W |
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