RJH1BF7RDPQ-80#T2
RJH1BF7 - INSULATED GATE BIPOLARManufacturer: Renesas
Categories: Single IGBTs
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Renesas RJH1BF7RDPQ-80-T2 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power conversion applications. This through-hole component features a robust 1100 V collector-emitter breakdown voltage and a continuous collector current rating of 60 A, with a pulsed capability of up to 100 A. The device dissipates a maximum power of 250 W and exhibits a low on-state voltage of 2.35V at 15V gate-emitter voltage and 60A collector current. Operating at junction temperatures up to 150°C, the RJH1BF7RDPQ-80-T2 is housed in a standard TO-247-3 package, suitable for industrial power supplies, motor control, and renewable energy systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.35V @ 15V, 60A |
| Supplier Device Package | TO-247 |
| IGBT Type | - |
| Td (on/off) @ 25°C | - |
| Switching Energy | - |
| Test Condition | - |
| Current - Collector (Ic) (Max) | 60 A |
| Voltage - Collector Emitter Breakdown (Max) | 1100 V |
| Current - Collector Pulsed (Icm) | 100 A |
| Power - Max | 250 W |
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