UPA2730TP-E2-AZ
UPA2730 - POWER FIELD-EFFECT TRAManufacturer: Renesas
Categories: Single FETs, MOSFETs
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Renesas UPA2730TP-E2-AZ is a P-Channel Power MOSFET designed for demanding applications. This device features a Drain-Source Voltage (Vdss) of 30V and offers continuous drain current capabilities of 20A at 25°C (Ta) and 42A at 25°C (Tc). The low on-resistance (Rds On) of 7mOhm is achieved at 7.5A and 10V Vgs. With a maximum power dissipation of 3W (Ta) and 40W (Tc), it is suitable for thermal management in high-power designs. The device exhibits a gate charge (Qg) of 97 nC at 10V and input capacitance (Ciss) of 4670 pF at 10V. It operates across a temperature range of -55°C to 150°C. The UPA2730TP-E2-AZ is packaged in an 8-HSOP (8-PowerSOIC) for surface mounting. This MOSFET is utilized in various industries including automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-PowerSOIC (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta), 42A (Tc) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 7.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 40W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-HSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 97 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4670 pF @ 10 V |
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