UPA2706GR-E2-AT
UPA2706GR-E2-AT - MOS FIELD EFFEManufacturer: Renesas
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Renesas N-Channel Power MOSFET, UPA2706GR-E2-AT, offers 30V drain-source breakdown voltage and continuous drain current capabilities of 11A at 25°C ambient and 20A at 25°C case. This device features a low on-resistance of 15mOhm maximum at 5.5A and 10V gate-source voltage. With a maximum power dissipation of 3W at 25°C ambient and 15W at 25°C case, it is designed for efficient operation. The UPA2706GR-E2-AT utilizes Metal Oxide Semiconductor technology and is supplied in a compact 8-SOP (8-SOIC) surface mount package. Key electrical parameters include a gate charge of 7.1 nC maximum at 5V and input capacitance of 660 pF maximum at 10V. This component is suitable for applications in power management, automotive systems, and industrial controls requiring robust switching performance. The operating temperature range extends to 150°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-SOIC (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta), 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 15W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.1 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 660 pF @ 10 V |
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