UPA2706GR-E1-AT
UPA2706GR-E1-AT - MOS FIELD EFFEManufacturer: Renesas
Categories: Single FETs, MOSFETs
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Renesas UPA2706GR-E1-AT is an N-Channel Power MOSFET designed for high-efficiency switching applications. This device features a drain-source breakdown voltage (Vds) of 30V and a continuous drain current (Id) of 11A at ambient temperature (Ta) and 20A at case temperature (Tc). The on-resistance (Rds On) is specified at a maximum of 15mOhm at 5.5A and 10V gate-source voltage. Gate drive requirements range from 4V to 10V for optimal on-resistance. The UPA2706GR-E1-AT exhibits a maximum power dissipation of 3W (Ta) and 15W (Tc). Key parameters include input capacitance (Ciss) of 660pF (max) at 10V and gate charge (Qg) of 7.1nC (max) at 5V. This MOSFET operates within a temperature range of 150°C and is supplied in an 8-SOP (8-SOIC) surface mount package. This component is suitable for use in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-SOIC (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta), 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 15W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.1 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 660 pF @ 10 V |
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