UPA2706GR-E1-A
UPA2706GR-E1-A - MOS FIELD EFFECManufacturer: Renesas
Categories: Single FETs, MOSFETs
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Renesas UPA2706GR-E1-A is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 30V and offers a continuous drain current capability of 11A under typical ambient conditions (Ta) and up to 20A when managed under case temperature (Tc). The device exhibits a low on-resistance (Rds On) of 15mOhm maximum at 5.5A and 10V Vgs. With a maximum power dissipation of 3W (Ta) or 15W (Tc), it is suitable for thermal management in compact designs. The UPA2706GR-E1-A is housed in an 8-SOP package, a surface mount configuration, and operates efficiently across a temperature range of -55°C to 150°C. Key parameters include a Gate Charge (Qg) of 7.1 nC maximum at 5V and Input Capacitance (Ciss) of 660 pF maximum at 10V. These characteristics make it a robust choice for power switching and control in industrial automation, automotive systems, and power supply units.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-SOIC (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta), 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 15W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.1 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 660 pF @ 10 V |
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