UPA1902TE-T1-AT
UPA1902TE-T1-AT - N-CHANNEL MOSManufacturer: Renesas
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Renesas N-Channel MOSFET, UPA1902TE-T1-AT. This surface mount device features a 30V drain-to-source voltage and 7A continuous drain current at 25°C ambient. The UPA1902TE-T1-AT offers a maximum Rds(on) of 22mOhm at 3.5A and 10V Vgs. Key parameters include a gate charge of 8 nC at 5V and input capacitance of 780 pF at 10V Vds. Power dissipation is rated at 200mW ambient. This component is suitable for applications in automotive and industrial sectors. The device operates at temperatures up to 150°C and is supplied in Bulk packaging.
Additional Information
Series: -RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SC-95 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Ta) |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 3.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 200mW (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | SC-95 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 8 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 780 pF @ 10 V |
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