UPA1808GR-9JG-E1-A
UPA1808 - N CHANNEL MOSFETManufacturer: Renesas
Categories: Single FETs, MOSFETs
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Renesas UPA1808GR-9JG-E1-A is an N-Channel Power MOSFET designed for demanding applications. This device features a 30V drain-source breakdown voltage and a continuous drain current capability of 9.5A at 25°C ambient. With a low on-resistance of 17mOhm at 5A and 10V gate-source voltage, it minimizes conduction losses. The UPA1808GR-9JG-E1-A is housed in an 8-Power TSSOP package for efficient thermal management, allowing for a maximum power dissipation of 2W at 25°C ambient. Key parameters include input capacitance (Ciss) of 660pF and gate charge (Qg) of 13nC, both measured at 10V. The gate threshold voltage (Vgs(th)) is 2.5V at 1mA, with a maximum gate-source voltage of ±20V. This component is suitable for use in power management, automotive, and industrial control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-PowerTSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 17mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-Power TSSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 660 pF @ 10 V |
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