UPA1759G-E1-A
UPA1759 - SWITCHING N-CHANNEL POManufacturer: Renesas
Categories: Single FETs, MOSFETs
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The Renesas UPA1759G-E1-A is an N-channel MOSFET designed for high-efficiency switching applications. This component features a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 5A at 25°C (Tc). The Rds On is specified at a maximum of 150mOhm at 2.5A and 10V Vgs, indicating low conduction losses. With a gate charge (Qg) of 8 nC at 10V and input capacitance (Ciss) of 190 pF at 10V, it is suitable for moderate switching frequencies. The device is housed in an 8-PowerSOIC package, offering efficient thermal dissipation with a maximum power dissipation of 2W (Ta). Operating temperature ranges up to 150°C, making it robust for demanding environments. This MOSFET finds application in power management circuits across various industries including automotive and industrial automation.
Additional Information
Series: -RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-PowerSOIC (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-PowerSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 190 pF @ 10 V |
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