UPA1740TP-E1-AZ
UPA1740TP-E1-AZ - MOS FIELD EFFEManufacturer: Renesas
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Renesas UPA1740TP-E1-AZ is an N-Channel Power MOSFET designed for demanding applications. This device features a drain-source voltage (Vdss) of 200V and a continuous drain current (Id) of 7A at 25°C (Tc). Its on-resistance (Rds On) is specified at a maximum of 440mOhm for 3.5A drain current and 10V gate-source voltage. Key parameters include a maximum gate charge (Qg) of 12 nC at 10V and input capacitance (Ciss) of 420 pF at 10V. The UPA1740TP-E1-AZ is housed in an 8-HSOP package, suitable for surface mounting and capable of dissipating up to 22W at 25°C (Tc). This component is utilized across various industries, including industrial automation and power supply design. The maximum gate-source voltage (Vgs) is ±30V, and the threshold voltage (Vgs(th)) is a maximum of 4.5V at 1mA.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-PowerSOIC (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Rds On (Max) @ Id, Vgs | 440mOhm @ 3.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta), 22W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |
| Supplier Device Package | 8-HSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 420 pF @ 10 V |
Request a Quote
Clients Also Buy
2SK4178-ZK-E1-AY
2SK4178 - SWITCHING N-CHANNEL PO
NP160N055TUJ-E1-AY
NP160N055TUJ-E1-AY - SWITCHINGN-
HAT1069C0S-EL-E
HAT1069C0S - P-CHANNEL POWER MOS
