UPA1727G-E1-AT
UPA1727G-E1-AT - MOS FIELD EFFECManufacturer: Renesas
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Renesas N-Channel MOSFET, part number UPA1727G-E1-AT, features a 60V drain-to-source voltage (Vdss) and a continuous drain current of 10A at 25°C ambient temperature. This surface mount device, housed in an 8-SOP package, offers a maximum on-resistance (Rds On) of 19mOhm at 5A and 10V Vgs. Key parameters include a gate charge (Qg) of 45 nC at 10V and input capacitance (Ciss) of 2400 pF at 10V Vds. The device supports a wide gate-source voltage range of ±20V and has a threshold voltage (Vgs(th)) of 2.5V at 1mA. With a maximum power dissipation of 2W (Ta) and an operating temperature up to 150°C, the UPA1727G-E1-AT is suitable for applications in industrial and automotive sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-SOIC (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
| Rds On (Max) @ Id, Vgs | 19mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2400 pF @ 10 V |
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