RQA0008RXDQS#H1
RQA0008 - N-CHANNEL POWER MOSFETManufacturer: Renesas
Categories: Single FETs, MOSFETs
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The Renesas RQA0008RXDQS-H1 is a N-Channel Power MOSFET designed for high-density power applications. This component boasts a Drain-to-Source Voltage (Vdss) of 16V and a continuous Drain Current (Id) of 2.4A at 25°C ambient temperature, with a maximum power dissipation of 10W (Tc). Featuring a low input capacitance of 44 pF at 0V, it is suitable for high-frequency switching. The MOSFET utilizes Metal Oxide technology and is presented in a TO-243AA (UPAK) surface mount package, ideal for compact designs. Its operating temperature range extends to 150°C, making it robust for demanding environments. This device finds application in portable electronics and power management solutions.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.4A (Ta) |
| Rds On (Max) @ Id, Vgs | - |
| FET Feature | - |
| Power Dissipation (Max) | 10W (Tc) |
| Vgs(th) (Max) @ Id | 800mV @ 1mA |
| Supplier Device Package | UPAK |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs (Max) | ±5V |
| Drain to Source Voltage (Vdss) | 16 V |
| Input Capacitance (Ciss) (Max) @ Vds | 44 pF @ 0 V |
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