RQA0002DNSTB-E
RQA0002DNS - N CHANNEL MOSFETManufacturer: Renesas
Categories: Single FETs, MOSFETs
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The Renesas RQA0002DNSTB-E is an N-Channel Power MOSFET designed for demanding applications. This device features a Drain-Source Voltage (Vdss) of 16V and a continuous Drain current (Id) capability of 3.8A at 25°C ambient temperature. The MOSFET offers a maximum power dissipation of 15W (Tc) and is supplied in a compact 2-HWSON (5x4) surface mount package. Key electrical characteristics include a typical gate threshold voltage (Vgs(th)) of 750mV at 1mA and an input capacitance (Ciss) of 102 pF at 0V. The operating temperature range extends to 150°C, making it suitable for use in automotive, industrial, and consumer electronics power management systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 3-DFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.8A (Ta) |
| Rds On (Max) @ Id, Vgs | - |
| FET Feature | - |
| Power Dissipation (Max) | 15W (Tc) |
| Vgs(th) (Max) @ Id | 750mV @ 1mA |
| Supplier Device Package | 2-HWSON (5x4) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs (Max) | ±5V |
| Drain to Source Voltage (Vdss) | 16 V |
| Input Capacitance (Ciss) (Max) @ Vds | 102 pF @ 0 V |
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