RJL5014DPP-E0#T2
RJL5014DPP-E0#T2 - SILICON N CHAManufacturer: Renesas
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Renesas N-Channel Power MOSFET, part number RJL5014DPP-E0-T2, offers a 500 V breakdown voltage and continuous drain current capability of 19A at 25°C ambient. This through-hole TO-220FP packaged device features a maximum on-resistance of 400 mOhm at 9.5A and 10V gate drive. With 35W power dissipation at 25°C case temperature and a gate charge of 43 nC (max) at 10V, this MOSFET is suitable for applications in power supply design, motor control, and industrial automation. Its operating temperature range extends to 150°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19A (Ta) |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 9.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 35W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-220FP |
| Grade | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1700 pF @ 25 V |
| Qualification | - |
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