RJK6013DPP-E0#T2
RJK6013DPP-E0#T2 - SILICON N CHAManufacturer: Renesas
Categories: Single FETs, MOSFETs
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Renesas N-Channel Power MOSFET, RJK6013DPP-E0-T2, offers a 600 V drain-source voltage capability. This device features a continuous drain current of 11A (Ta) and a maximum power dissipation of 30W (Tc). The Rds On is specified at a maximum of 700mOhm at 5.5A and 10V gate-source voltage. Key parameters include a gate charge of 37.5 nC @ 10 V and input capacitance of 1450 pF @ 25 V. The component is housed in a TO-220FP package and supports through-hole mounting. This MOSFET is suitable for applications in power supplies, motor control, and industrial automation.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
| Rds On (Max) @ Id, Vgs | 700mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |
| Supplier Device Package | TO-220FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 37.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1450 pF @ 25 V |
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