RJK6012DPP-E0#T2
RJK6012DPP - N CHANNEL MOSFETManufacturer: Renesas
Categories: Single FETs, MOSFETs
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Renesas RJK6012DPP is a high-voltage N-Channel Power MOSFET designed for demanding applications. This device features a Drain-Source Voltage (Vdss) of 600V and a continuous Drain Current (Id) of 10A at 25°C (Ta), with a maximum power dissipation of 30W (Ta). The Rds On is specified at a maximum of 920mOhm at 5A and 10V. Key parameters include a Gate Charge (Qg) of 30 nC at 10V and an input capacitance (Ciss) of 1100 pF at 25V. The MOSFET operates within a temperature range of -55°C to 150°C and supports a Gate-Source Voltage (Vgs) up to ±30V. The RJK6012DPP is housed in a TO-220FP package with a through-hole mounting type. This component finds application in power supply units, industrial motor control, and general-purpose power switching.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
| Rds On (Max) @ Id, Vgs | 920mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Ta) |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |
| Supplier Device Package | TO-220FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 25 V |
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