RJK6011DP3-A0#J2
RJK6011DP3-A0#J2 - SILICON NCH SManufacturer: Renesas
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Renesas RJK6011DP3-A0-J2 is a Silicon N-Channel MOSFET designed for high-voltage applications. This component features a Drain-to-Source Voltage (Vdss) of 600 V and a continuous Drain Current (Id) of 100mA at 25°C. The RJK6011DP3-A0-J2 utilizes MOSFET technology and is housed in a SOT-223 surface-mount package (TO-261-4, TO-261AA). This device is suitable for use in power management and switching applications across various industries including industrial automation, consumer electronics, and telecommunications equipment. The component is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100mA |
| Rds On (Max) @ Id, Vgs | - |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | SOT-223 |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs (Max) | - |
| Drain to Source Voltage (Vdss) | 600 V |
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