RJK6002DPH-E0#T2
RJK6002DPH - N CHANNEL MOSFETManufacturer: Renesas
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Renesas RJK6002DPH is an N-Channel Power MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 600V and a continuous Drain Current (Id) of 2A at 25°C (Ta). The Rds On is specified at a maximum of 6.8 Ohms at 1A and 10V gate drive. With a maximum power dissipation of 30W (Tc), it is suitable for demanding thermal environments. The device operates at temperatures up to 150°C and is packaged in a TO-251-3 Short Leads (IPAK) for through-hole mounting. Key parameters include a Gate Charge (Qg) of 6.2 nC and Input Capacitance (Ciss) of 165 pF. This MOSFET is utilized in various power management and switching applications across industries such as industrial automation and power supplies.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
| Rds On (Max) @ Id, Vgs | 6.8Ohm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |
| Supplier Device Package | TO-251 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 165 pF @ 25 V |
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