RJK5030DPD-03#J2
RJK5030DPD - N CHANNEL MOSFETManufacturer: Renesas
Categories: Single FETs, MOSFETs
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The Renesas RJK5030DPD-03-J2 is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 500 V and a continuous drain current (Id) rating of 5A (Ta) at 25°C, with a maximum power dissipation of 41.7W (Tc). The Rds On is specified at a maximum of 1.6 Ohm at 2A and 10V Vgs. It utilizes Metal Oxide technology and is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package, also known as MP-3A. Key parameters include an input capacitance (Ciss) of 550 pF @ 25 V and a gate-source voltage (Vgs) limit of ±30V. The device operates at temperatures up to 150°C and is supplied in bulk packaging. This MOSFET is suitable for use in power supply, industrial automation, and motor control applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta) |
| Rds On (Max) @ Id, Vgs | 1.6Ohm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 41.7W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |
| Supplier Device Package | MP-3A |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Input Capacitance (Ciss) (Max) @ Vds | 550 pF @ 25 V |
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