RJK5013DPP-00#T2
RJK5013DPP - N CHANNEL MOSFETManufacturer: Renesas
Categories: Single FETs, MOSFETs
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Renesas RJK5013DPP-00-T2 is an N-Channel Power MOSFET designed for high-voltage applications. This device features a Drain-Source Voltage (Vdss) of 500 V and a continuous Drain Current (Id) capability of 14 A (Ta). With a maximum power dissipation of 30 W (Tc) and a low on-resistance of 465 mOhm at 7 A and 10 V, it offers efficient power handling. The TO-220FN package with through-hole mounting facilitates integration into various systems. Key parameters include a gate charge (Qg) of 38 nC (Max) at 10 V and input capacitance (Ciss) of 1450 pF (Max) at 25 V. This MOSFET is suitable for applications in power supplies, motor control, and industrial automation.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Ta) |
| Rds On (Max) @ Id, Vgs | 465mOhm @ 7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |
| Supplier Device Package | TO-220FN |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1450 pF @ 25 V |
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