RJK5012DPP-MG#T2
RJK5012DPP - N CHANNEL MOSFETManufacturer: Renesas
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Renesas N-Channel Power MOSFET, part number RJK5012DPP-MG-T2, offers a 500V drain-source breakdown voltage and a continuous drain current of 12A at 25°C ambient. This TO-220FN packaged device features a maximum on-resistance of 620mOhm at 6A and 10V Vgs. The gate charge is specified at 29nC maximum, with input capacitance at 1100pF maximum. It supports a drive voltage up to 10V and has a maximum gate-source voltage of ±30V. With a power dissipation of 30W at the case temperature, this MOSFET is suitable for through-hole mounting and operates up to 150°C. Applications include power supplies, industrial motor control, and lighting systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
| Rds On (Max) @ Id, Vgs | 620mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |
| Supplier Device Package | TO-220FN |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 25 V |
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