RJK1003DPP-E0#T2
RJK1003DPP - N-CHANNEL MOSFET 10Manufacturer: Renesas
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Renesas RJK1003DPP is an N-channel MOSFET designed for robust power applications. This through-hole component features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 50A at 25°C. The RJK1003DPP exhibits a low on-resistance (Rds On) of 11mOhm maximum at 25A and 10V gate-source voltage. It has a maximum power dissipation of 25W (Tc) and operates at temperatures up to 150°C. Key parameters include a gate charge (Qg) of 59 nC maximum at 10V and input capacitance (Ciss) of 4150 pF maximum at 10V. The TO-220FP package is suitable for applications in automotive, industrial power control, and power supply systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Ta) |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 25W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-220FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 59 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4150 pF @ 10 V |
Request a Quote
Clients Also Buy
UPA2706GR-E1-A
UPA2706GR-E1-A - MOS FIELD EFFEC
2SK3431-AZ
2SK3431-AZ - SWITCHING N-CHANNEL
2SK3714(0)-S12-AZ
2SK3714 - SWITCHING N-CHANNEL
