RJK0601DPN-E0#T2
RJK0601DPN - N-CHANNEL MOSFET 60Manufacturer: Renesas
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Renesas RJK0601DPN is an N-Channel Power MOSFET housed in a TO-220ABS package. This through-hole component offers a drain-source voltage (Vdss) of 60 V and a continuous drain current (Id) of 110 A at 25°C (Ta). With a maximum power dissipation of 200 W (Tc) and a low on-resistance (Rds On) of 3.1 mOhm at 55 A and 10 V, it is suitable for high-current applications. Key parameters include a gate charge (Qg) of 141 nC at 10 V and input capacitance (Ciss) of 10000 pF at 10 V. The device operates within an ambient temperature range of 150°C. This MOSFET is commonly employed in power supply units, motor control, and power management circuits across various industrial and automotive sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 110A (Ta) |
| Rds On (Max) @ Id, Vgs | 3.1mOhm @ 55A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 200W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-220ABS |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 141 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10000 pF @ 10 V |
Request a Quote
Clients Also Buy
UPA1740TP-E1-AZ
UPA1740TP-E1-AZ - MOS FIELD EFFE
HAT1069C0S-EL-E
HAT1069C0S - P-CHANNEL POWER MOS
UPA2706GR-E1-A
UPA2706GR-E1-A - MOS FIELD EFFEC
