NP88N075EUE-E2-AY
NP88N075EUE - POWER MOSFETS FORManufacturer: Renesas
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Renesas NP88N075EUE-E2-AY is an N-Channel Power MOSFET offering a 75V drain-to-source voltage. This device features a low on-resistance of 8.5mOhm maximum at 44A and 10V gate-source voltage. With a continuous drain current of 88A at 25°C (Tc) and a significant power dissipation capability of 288W (Tc), it is suitable for demanding applications. The MOSFET exhibits a gate charge of 230 nC maximum at 10V and an input capacitance of 12300 pF maximum at 25V. The NP88N075EUE-E2-AY is housed in a TO-263-3 surface mount package and operates at temperatures up to 175°C. This component finds application in power management, automotive systems, and industrial automation.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 88A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.5mOhm @ 44A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta), 288W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 230 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 12300 pF @ 25 V |
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