NP88N04NUG-S18-AY
NP88N04NUG-S18-AY - MOS FIELD EFManufacturer: Renesas
Categories: Single FETs, MOSFETs
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Renesas NP88N04NUG-S18-AY is an N-Channel Power MOSFET designed for high-current applications. This component features a 40V drain-source breakdown voltage and a continuous drain current capability of 88A at 25°C (Tc). The device exhibits a low on-resistance of 3.4mOhm at 44A and 10V Vgs, with a maximum gate charge of 250 nC at 10V. Input capacitance (Ciss) is specified at 15000 pF at 25V. Power dissipation is rated at 1.8W (Ta) and 200W (Tc). The NP88N04NUG-S18-AY is housed in a TO-262-3 Long Leads (I2PAK, TO-262AA) through-hole package, suitable for demanding thermal environments with an operating temperature of up to 175°C. This MOSFET is utilized in power management, automotive, and industrial power switching applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 88A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.4mOhm @ 44A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta), 200W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 250 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 15000 pF @ 25 V |
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