NP80N06MLG-S18-AY
NP80N06MLG-S18-AY - SWITCHINGN-CManufacturer: Renesas
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Renesas N-Channel MOSFET, part number NP80N06MLG-S18-AY, features a 60V drain-source voltage and a continuous drain current of 80A at 25°C (Tc). This device offers low on-resistance of 8.6mOhm maximum at 40A and 10V Vgs. The gate charge (Qg) is 128nC maximum at 10V, and input capacitance (Ciss) is 6900pF maximum at 25V. With a maximum power dissipation of 115W (Tc), it operates at temperatures up to 175°C. The NP80N06MLG-S18-AY is housed in a through-hole TO-220-3 package, identified by the supplier device package MP-25K. This component is suitable for applications in industrial automation, power supply, and automotive sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.6mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta), 115W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | MP-25K |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 128 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6900 pF @ 25 V |
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