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NP80N06MLG-S18-AY

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NP80N06MLG-S18-AY

NP80N06MLG-S18-AY - SWITCHINGN-C

Manufacturer: Renesas

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Renesas N-Channel MOSFET, part number NP80N06MLG-S18-AY, features a 60V drain-source voltage and a continuous drain current of 80A at 25°C (Tc). This device offers low on-resistance of 8.6mOhm maximum at 40A and 10V Vgs. The gate charge (Qg) is 128nC maximum at 10V, and input capacitance (Ciss) is 6900pF maximum at 25V. With a maximum power dissipation of 115W (Tc), it operates at temperatures up to 175°C. The NP80N06MLG-S18-AY is housed in a through-hole TO-220-3 package, identified by the supplier device package MP-25K. This component is suitable for applications in industrial automation, power supply, and automotive sectors.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature175°C
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Rds On (Max) @ Id, Vgs8.6mOhm @ 40A, 10V
FET Feature-
Power Dissipation (Max)1.8W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackageMP-25K
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds6900 pF @ 25 V

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