NP80N055MHE-S18-AY
NP80N055MHE-S18-AY - SWITCHINGN-Manufacturer: Renesas
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Renesas N-Channel Power MOSFET, NP80N055MHE-S18-AY, offers a 55V drain-to-source voltage with a continuous drain current of 80A at 25°C (Tc). This through-hole component features low on-resistance of 11mOhm maximum at 40A and 10V Vgs. The NP80N055MHE-S18-AY has a gate charge of 60 nC maximum at 10V and input capacitance of 3600 pF maximum at 25V. Maximum power dissipation is rated at 1.8W (Ta) and 120W (Tc). Operating temperature range extends to 175°C. This MOSFET is suitable for applications in automotive and industrial power control systems. The device is supplied in a TO-220-3 package (MP-25K) and is available in bulk packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta), 120W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | MP-25K |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3600 pF @ 25 V |
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