NP80N055KLE-E1-AY
NP80N055KLE-E1-AY - SWITCHINGN-CManufacturer: Renesas
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Renesas NP80N055KLE-E1-AY is a N-Channel MOSFET designed for high-current switching applications. This component features a Drain-to-Source Voltage (Vdss) of 55 V and a continuous drain current (Id) of 80 A at 25°C (Tc). The on-resistance (Rds On) is specified as a maximum of 11 mOhm at 40 A and 10 V. The device supports gate drive voltages from 4.5 V to 10 V, with a maximum gate-source voltage (Vgs) of ±20 V. Key capacitance parameters include an input capacitance (Ciss) of 4400 pF at 25 V and a gate charge (Qg) of 75 nC at 10 V. Power dissipation capabilities are 1.8 W (Ta) and 120 W (Tc). This MOSFET is housed in a TO-263-3 (D2PAK) surface mount package and operates at temperatures up to 175°C. It is suitable for use in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta), 120W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4400 pF @ 25 V |
Request a Quote
Clients Also Buy
UPA1740TP-E1-AZ
UPA1740TP-E1-AZ - MOS FIELD EFFE
HAT1069C0S-EL-E
HAT1069C0S - P-CHANNEL POWER MOS
UPA2706GR-E1-A
UPA2706GR-E1-A - MOS FIELD EFFEC
