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NP80N055KLE-E1-AY

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NP80N055KLE-E1-AY

NP80N055KLE-E1-AY - SWITCHINGN-C

Manufacturer: Renesas

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Renesas NP80N055KLE-E1-AY is a N-Channel MOSFET designed for high-current switching applications. This component features a Drain-to-Source Voltage (Vdss) of 55 V and a continuous drain current (Id) of 80 A at 25°C (Tc). The on-resistance (Rds On) is specified as a maximum of 11 mOhm at 40 A and 10 V. The device supports gate drive voltages from 4.5 V to 10 V, with a maximum gate-source voltage (Vgs) of ±20 V. Key capacitance parameters include an input capacitance (Ciss) of 4400 pF at 25 V and a gate charge (Qg) of 75 nC at 10 V. Power dissipation capabilities are 1.8 W (Ta) and 120 W (Tc). This MOSFET is housed in a TO-263-3 (D2PAK) surface mount package and operates at temperatures up to 175°C. It is suitable for use in automotive and industrial power management systems.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature175°C
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Rds On (Max) @ Id, Vgs11mOhm @ 40A, 10V
FET Feature-
Power Dissipation (Max)1.8W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackageTO-263-3
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)55 V
Gate Charge (Qg) (Max) @ Vgs75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4400 pF @ 25 V

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  • RL78 family - ultra-low-power microcontrollers for cost-sensitive applications
  • Dialog PMICs - power management ICs (from Dialog Semiconductor acquisition)
  • Intersil analog portfolio - precision analog and power devices
  • ClockMatrix - timing and synchronization solutions
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