NP60N04ILF-E1-AZ
NP60N04ILF-E1-AZ - SWITCHINGN-CHManufacturer: Renesas
Categories: Single FETs, MOSFETs
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The Renesas NP60N04ILF-E1-AZ is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a Drain-Source Voltage (Vdss) of 40V and a continuous drain current (Id) rating of 60A at 25°C (Tc). The low on-resistance (Rds On) of 6.5mOhm at 30A and 10V gate-source voltage (Vgs) minimizes conduction losses. With a maximum gate charge (Qg) of 75 nC at 10V Vgs and input capacitance (Ciss) of 3900 pF at 25V Vds, it facilitates fast switching speeds. The device offers substantial power dissipation capabilities, rated at 100W (Tc) and 1.2W (Ta), and operates across a wide temperature range up to 175°C. This MOSFET is housed in a TO-252-3, DPAK surface mount package, suitable for power management solutions in automotive and industrial sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.2W (Ta), 100W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-252 (MP-3Z) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3900 pF @ 25 V |
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