NP34N055SLE-E1-AY
NP34N055 - POWER FIELD-EFFECT TRManufacturer: Renesas
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Renesas NP34N055SLE-E1-AY is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a drain-source voltage (Vdss) of 55V and a continuous drain current (Id) of 34A at 25°C. The on-resistance (Rds On) is specified at a maximum of 18mOhm at 17A and 10V gate-source voltage. With a gate charge (Qg) of 72 nC maximum at 10V, it offers excellent switching characteristics. The device supports a wide gate drive voltage range from 4.5V to 10V and a maximum gate-source voltage of ±20V. Power dissipation is rated at 1.2W (Ta) and 88W (Tc). The NP34N055SLE-E1-AY is housed in a TO-252-3, DPAK surface mount package, suitable for applications in automotive and industrial power management systems. Its operating temperature reaches up to 175°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 34A (Ta) |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 17A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.2W (Ta), 88W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-252 (MP-3ZK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 72 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3000 pF @ 25 V |
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