NP32N055SDE-E1-AZ
NP32N055SDE-E1-AZ - MOS FIELD EFManufacturer: Renesas
Categories: Single FETs, MOSFETs
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The Renesas NP32N055SDE-E1-AZ is an N-Channel Power MOSFET designed for demanding applications. This device features a drain-source voltage (Vdss) of 55 V and a continuous drain current (Id) of 32 A at 25°C (Tc). With a maximum on-resistance (Rds On) of 24 mOhm at 16 A and 10 V gate-source voltage, it offers efficient power handling. The MOSFET exhibits a gate charge (Qg) of 41 nC at 10 V and input capacitance (Ciss) of 2000 pF at 25 V.
The NP32N055SDE-E1-AZ is housed in a surface mount TO-252 (MP-3ZK) package, providing robust thermal performance with a maximum power dissipation of 1.2 W (Ta) and 66 W (Tc). This component operates reliably across a wide temperature range, up to 175°C. Its characteristics make it suitable for use in automotive, industrial power supplies, and motor drive systems. The device supports drive voltages from 4.5V to 10V and has a gate-source voltage (Vgs) limit of ±20V.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 32A (Tc) |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.2W (Ta), 66W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-252 (MP-3ZK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2000 pF @ 25 V |
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