NP160N055TUJ-E1-AY
NP160N055TUJ-E1-AY - SWITCHINGN-Manufacturer: Renesas
Categories: Single FETs, MOSFETs
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Renesas NP160N055TUJ-E1-AY is an N-Channel MOSFET designed for high-power switching applications. This component features a drain-source voltage (Vdss) of 55 V and a continuous drain current (Id) capability of 160 A at 25°C (Tc). The on-resistance (Rds On) is specified at a maximum of 3 mOhm at 80 A and 10 V drive voltage. With a gate charge (Qg) of 180 nC (max) at 10 V and input capacitance (Ciss) of 10350 pF (max) at 25 V, it offers efficient switching characteristics. The device has a maximum power dissipation of 250 W at 25°C (Tc) and 1.8 W at 25°C (Ta). Operating at temperatures up to 175°C, the NP160N055TUJ-E1-AY is housed in a TO-263-7 (D2PAK) surface-mount package, suitable for robust thermal management. This MOSFET is utilized in demanding sectors such as industrial power supplies, automotive electronics, and electric vehicle powertrains.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 160A (Tc) |
| Rds On (Max) @ Id, Vgs | 3mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta), 250W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263-7 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10350 pF @ 25 V |
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