NP110N055PUJ-E1B-AY
NP110N055PUJ-E1B-AY - SWITCHINGNManufacturer: Renesas
Categories: Single FETs, MOSFETs
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Renesas NP110N055PUJ-E1B-AY is an N-Channel Power MOSFET designed for high-current switching applications. This device features a Drain-to-Source Voltage (Vdss) of 55V and a continuous drain current (Id) of 110A at 25°C (Tc). The on-resistance (Rds On) is a maximum of 2.4mOhm at 55A and 10V gate drive. Key parameters include a maximum gate charge (Qg) of 230 nC at 10V and input capacitance (Ciss) of 14250 pF at 25V. The MOSFET operates at temperatures up to 175°C and offers a maximum power dissipation of 288W (Tc). Packaged in a TO-263-3 (D2PAK) surface-mount configuration, this component is suitable for demanding power management solutions in automotive and industrial sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.4mOhm @ 55A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta), 288W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 230 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 14250 pF @ 25 V |
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