HAT2205C-EL-E
HAT2205C - N-CHANNEL POWER MOSFEManufacturer: Renesas
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Renesas HAT2205C-EL-E is an N-Channel Power MOSFET designed for demanding applications. This surface mount component features a Drain-to-Source Voltage (Vdss) of 12V and a continuous drain current (Id) capability of 3A at 25°C. With a maximum Rds On of 50mOhm at 1.5A and 4.5V Vgs, it offers efficient power switching. The device exhibits a typical Gate Charge (Qg) of 6 nC at 4.5V and an Input Capacitance (Ciss) of 430 pF at 10V. Operating at a maximum temperature of 150°C, it is packaged in a 6-CMFPAK (6-SMD, Flat Leads). This MOSFET is suitable for use in various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 1.5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 200mW (Ta) |
| Vgs(th) (Max) @ Id | 1.2V @ 1mA |
| Supplier Device Package | 6-CMFPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 430 pF @ 10 V |
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